Bias voltage dependence of magnetocurrent in magnetic tunnel transistors

Xin Jiang*, Sebastiaan van Dijken, Roger Wang, Stuart S P Parkin

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

17 Citations (Scopus)


The magnetocurrent of magnetic tunnel transistors is measured as a function of emitter/base bias voltage. A nonmonotonic bias dependence is found for magnetic tunnel transistors with a GaAs collector, whereas a monotonic decrease of the magnetocurrent with bias voltage is observed for transistors with a Si collector. A model including spin-dependent inelastic electron scattering in the ferromagnetic base layer and strong electron scattering at the base/collector interface can well account for the experimental results. The different bias dependences of magnetic tunnel transistors with GaAs and Si collectors is attributed to the different conduction band structures of these semiconductor collectors.

Original languageEnglish
Article number014413
Number of pages6
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number1
Publication statusPublished - Jan 2004
MoE publication typeA1 Journal article-refereed

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