Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Jaehyun Lee; Jie Liang; Salvatore M. Amoroso; Toufik Sadi; Liping Wang; Flamen Asenov; Andrew Pender; Dave T. Reid; Vihar P. Georgiev; Campbell Millar; Aida Todri-Sanial; Asen Asenov

doi:10.23919/SISPAD.2017.8085287

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Jaehyun Lee, Jie Liang, Salvatore M. Amoroso, Toufik Sadi, Liping Wang, Flamen Asenov, Andrew Pender, Dave T. Reid, Vihar P. Georgiev, Campbell Millar, Aida Todri-Sanial, Asen Asenov

Department of Neuroscience and Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.

Original language	English
Title of host publication	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Publisher	IEEE
Pages	153-156
Number of pages	4
ISBN (Electronic)	9784863486102
DOIs	https://doi.org/10.23919/SISPAD.2017.8085287
Publication status	Published - 25 Oct 2017
MoE publication type	A4 Conference publication
Event	International Conference on Simulation of Semiconductor Processes and Devices - Kamakura, Japan Duration: 7 Sept 2017 → 9 Sept 2017

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
Abbreviated title	SISPAD
Country/Territory	Japan
City	Kamakura
Period	07/09/2017 → 09/09/2017

Keywords

carbon nanotubes (CNTs)
circuit simulation
Cu-CNT composites
Density Functional Theory (DFT)
hierarchical models
interconnects

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10.23919/SISPAD.2017.8085287

http://eprints.gla.ac.uk/147286/

Cite this

Lee, J., Liang, J., Amoroso, S. M., Sadi, T., Wang, L., Asenov, F., Pender, A., Reid, D. T., Georgiev, V. P., Millar, C., Todri-Sanial, A., & Asenov, A. (2017). Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (pp. 153-156). Article 8085287 IEEE. https://doi.org/10.23919/SISPAD.2017.8085287

@inproceedings{5133bc644a0f4cedbc272960c8ed2ac5,

title = "Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology",

abstract = "In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.",

keywords = "carbon nanotubes (CNTs), circuit simulation, Cu-CNT composites, Density Functional Theory (DFT), hierarchical models, interconnects",

author = "Jaehyun Lee and Jie Liang and Amoroso, {Salvatore M.} and Toufik Sadi and Liping Wang and Flamen Asenov and Andrew Pender and Reid, {Dave T.} and Georgiev, {Vihar P.} and Campbell Millar and Aida Todri-Sanial and Asen Asenov",

year = "2017",

month = oct,

day = "25",

doi = "10.23919/SISPAD.2017.8085287",

language = "English",

pages = "153--156",

booktitle = "2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017",

publisher = "IEEE",

address = "United States",

note = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD ; Conference date: 07-09-2017 Through 09-09-2017",

}

Lee, J, Liang, J, Amoroso, SM, Sadi, T, Wang, L, Asenov, F, Pender, A, Reid, DT, Georgiev, VP, Millar, C, Todri-Sanial, A & Asenov, A 2017, Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. in 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017., 8085287, IEEE, pp. 153-156, International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 07/09/2017. https://doi.org/10.23919/SISPAD.2017.8085287

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. / Lee, Jaehyun; Liang, Jie; Amoroso, Salvatore M. et al.
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. IEEE, 2017. p. 153-156 8085287.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

AU - Lee, Jaehyun

AU - Liang, Jie

AU - Amoroso, Salvatore M.

AU - Sadi, Toufik

AU - Wang, Liping

AU - Asenov, Flamen

AU - Pender, Andrew

AU - Reid, Dave T.

AU - Georgiev, Vihar P.

AU - Millar, Campbell

AU - Todri-Sanial, Aida

AU - Asenov, Asen

PY - 2017/10/25

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N2 - In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.

AB - In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.

KW - carbon nanotubes (CNTs)

KW - circuit simulation

KW - Cu-CNT composites

KW - Density Functional Theory (DFT)

KW - hierarchical models

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BT - 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017

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Y2 - 7 September 2017 through 9 September 2017

ER -

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

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Keywords

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