Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Stefan Schulz, Miguel A. Caro, Conor Coughlan, Eoin P. "O'Reilly"

Research output: Contribution to journalArticleScientificpeer-review

75 Citations (Scopus)
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Abstract

We present an atomistic description of the electronic and optical properties of In0.25Ga0.75N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties, leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data.
Original languageEnglish
Article number035439
Pages (from-to)1-12
JournalPhysical Review B
Volume91
Issue number3
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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