Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system

O. S. Trushin*, A. N. Kupryanov, S. C. Ying, E. Granato, Tapio Ala-Nissilä

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Strain relief mechanisms in heteroepitaxial Cu/Ni(001) system are studied using molecular static methods with semiempirical EAM potentials. In particular, the process of a V-shape defect (internal (111) faceting) nucleation is considered, and the corresponding activation barriers and critical thicknesses are estimated.

Original languageEnglish
Pages (from-to)410-413
Number of pages4
JournalRussian Microelectronics
Volume44
Issue number6
DOIs
Publication statusPublished - 1 Nov 2015
MoE publication typeA1 Journal article-refereed

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