Atomic layer etching of gallium nitride (0001)

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Fraunhofer Institute for Ceramic Technologies and Systems IKTS
  • Lund University

Abstract

In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.

Details

Original languageEnglish
Article number060603
Pages (from-to)1-5
Number of pages5
JournalJOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A
Volume35
Issue number6
Publication statusPublished - 1 Nov 2017
MoE publication typeA1 Journal article-refereed

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