Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics

Tomi Koskinen; Ulrika Volin; Camilla Tossi; Ramesh Raju; Ilkka Tittonen

doi:10.1088/1361-6528/ac9980

Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics

Tomi Koskinen^*
, Ulrika Volin
, Camilla Tossi
, Ramesh Raju
, Ilkka Tittonen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

127 Downloads (Pure)

Abstract

Atomic layer deposited (ALD) transparent thermoelectric materials enable the introduction of energy harvesting and sensing devices onto surfaces of various shapes and sizes in imperceptible manner. Amongst these materials, ZnO has shown promising results in terms of both thermoelectric and optical characteristics. The thermoelectric performance of ZnO can be further optimized by introducing extrinsic doping, to the realization of which ALD provides excellent control. Here, we explore the effects of sandwiching of ZrO₂ layers with ZnO on glass substrates. The room-temperature thermoelectric power factor is maximised at 116μW m⁻¹ K⁻² with samples containing a 2% nominal percentage of ZrO₂. The addition of ZrO₂ layers is further shown to reduce the thermal conductivity, resulting in a 20.2% decrease from the undoped ZnO at 2% doping. Our results contribute to increasing the understanding of the effects of Zr inclusion in structural properties and growth of ALD ZnO, as well as the thermal and thermoelectric properties of Zr-doped ZnO films in general.

Original language	English
Article number	035401
Journal	Nanotechnology
Volume	34
Issue number	3
DOIs	https://doi.org/10.1088/1361-6528/ac9980
Publication status	Published - 15 Jan 2023
MoE publication type	A1 Journal article-refereed

Funding

The authors acknowledge the financial support from the Academy of Finland projects 319018 eVapor and 329406 CarbonSurf as well as from the Photonics Flagship PREIN. T.K. acknowledges the doctoral school of Aalto University School of Electrical Engineering, Walter Ahlström foundation and Waldemar Von Frenckell foundation for financial support. C.T. acknowledges the financial support of the Yrjö, Vilho ja Kalle Väisälä Fund and of the Finnish Academy of Sciences and Letters. The experimental work was carried out in Micronova, the nanofabrication facility of Aalto University. Edgar Maiorov is acknowledged for ALD equipment support. Dr Vladimir Kornienko is acknowledged for helping with the transmission measurement. The characterization by XRD, TEM and FIB was carried out in the Nanomicroscopy Center of Aalto University. The authors acknowledge the financial support from the Academy of Finland projects 319018 eVapor and 329406 CarbonSurf as well as from the Photonics Flagship PREIN. T.K. acknowledges the doctoral school of Aalto University School of Electrical Engineering, Walter Ahlström foundation and Waldemar Von Frenckell foundation for financial support. C.T. acknowledges the financial support of the Yrjö, Vilho ja Kalle Väisälä Fund and of the Finnish Academy of Sciences and Letters. The experimental work was carried out in Micronova, the nanofabrication facility of Aalto University. Edgar Maiorov is acknowledged for ALD equipment support. Dr Vladimir Kornienko is acknowledged for helping with the transmission measurement. The characterization by XRD, TEM and FIB was carried out in the Nanomicroscopy Center of Aalto University.

Keywords

atomic layer deposition
thermoelectric
transparent
zinc oxide
zirconium

Access to Document

10.1088/1361-6528/ac9980Licence: CC BY

Koskinen_2023_Nanotechnology_34_035401Final published version, 4.9 MBLicence: CC BY

Cite this

@article{4e40a3d3f83d4510b97713efbc3eff5f,

title = "Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics",

abstract = "Atomic layer deposited (ALD) transparent thermoelectric materials enable the introduction of energy harvesting and sensing devices onto surfaces of various shapes and sizes in imperceptible manner. Amongst these materials, ZnO has shown promising results in terms of both thermoelectric and optical characteristics. The thermoelectric performance of ZnO can be further optimized by introducing extrinsic doping, to the realization of which ALD provides excellent control. Here, we explore the effects of sandwiching of ZrO2 layers with ZnO on glass substrates. The room-temperature thermoelectric power factor is maximised at 116μW m−1 K−2 with samples containing a 2\% nominal percentage of ZrO2. The addition of ZrO2 layers is further shown to reduce the thermal conductivity, resulting in a 20.2\% decrease from the undoped ZnO at 2\% doping. Our results contribute to increasing the understanding of the effects of Zr inclusion in structural properties and growth of ALD ZnO, as well as the thermal and thermoelectric properties of Zr-doped ZnO films in general.",

keywords = "atomic layer deposition, thermoelectric, transparent, zinc oxide, zirconium",

author = "Tomi Koskinen and Ulrika Volin and Camilla Tossi and Ramesh Raju and Ilkka Tittonen",

note = "Funding Information: The authors acknowledge the financial support from the Academy of Finland projects 319018 eVapor and 329406 CarbonSurf as well as from the Photonics Flagship PREIN. T.K. acknowledges the doctoral school of Aalto University School of Electrical Engineering, Walter Ahlstr{\"o}m foundation and Waldemar Von Frenckell foundation for financial support. C.T. acknowledges the financial support of the Yrj{\"o}, Vilho ja Kalle V{\"a}is{\"a}l{\"a} Fund and of the Finnish Academy of Sciences and Letters. The experimental work was carried out in Micronova, the nanofabrication facility of Aalto University. Edgar Maiorov is acknowledged for ALD equipment support. Dr Vladimir Kornienko is acknowledged for helping with the transmission measurement. The characterization by XRD, TEM and FIB was carried out in the Nanomicroscopy Center of Aalto University. Funding Information: The authors acknowledge the financial support from the Academy of Finland projects 319018 eVapor and 329406 CarbonSurf as well as from the Photonics Flagship PREIN. T.K. acknowledges the doctoral school of Aalto University School of Electrical Engineering, Walter Ahlstr{\"o}m foundation and Waldemar Von Frenckell foundation for financial support. C.T. acknowledges the financial support of the Yrj{\"o}, Vilho ja Kalle V{\"a}is{\"a}l{\"a} Fund and of the Finnish Academy of Sciences and Letters. The experimental work was carried out in Micronova, the nanofabrication facility of Aalto University. Edgar Maiorov is acknowledged for ALD equipment support. Dr Vladimir Kornienko is acknowledged for helping with the transmission measurement. The characterization by XRD, TEM and FIB was carried out in the Nanomicroscopy Center of Aalto University. Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by IOP Publishing Ltd.",

year = "2023",

month = jan,

day = "15",

doi = "10.1088/1361-6528/ac9980",

language = "English",

volume = "34",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "Institute of Physics Publishing",

number = "3",

}

TY - JOUR

T1 - Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics

AU - Koskinen, Tomi

AU - Volin, Ulrika

AU - Tossi, Camilla

AU - Raju, Ramesh

AU - Tittonen, Ilkka

N1 - Funding Information: The authors acknowledge the financial support from the Academy of Finland projects 319018 eVapor and 329406 CarbonSurf as well as from the Photonics Flagship PREIN. T.K. acknowledges the doctoral school of Aalto University School of Electrical Engineering, Walter Ahlström foundation and Waldemar Von Frenckell foundation for financial support. C.T. acknowledges the financial support of the Yrjö, Vilho ja Kalle Väisälä Fund and of the Finnish Academy of Sciences and Letters. The experimental work was carried out in Micronova, the nanofabrication facility of Aalto University. Edgar Maiorov is acknowledged for ALD equipment support. Dr Vladimir Kornienko is acknowledged for helping with the transmission measurement. The characterization by XRD, TEM and FIB was carried out in the Nanomicroscopy Center of Aalto University. Funding Information: The authors acknowledge the financial support from the Academy of Finland projects 319018 eVapor and 329406 CarbonSurf as well as from the Photonics Flagship PREIN. T.K. acknowledges the doctoral school of Aalto University School of Electrical Engineering, Walter Ahlström foundation and Waldemar Von Frenckell foundation for financial support. C.T. acknowledges the financial support of the Yrjö, Vilho ja Kalle Väisälä Fund and of the Finnish Academy of Sciences and Letters. The experimental work was carried out in Micronova, the nanofabrication facility of Aalto University. Edgar Maiorov is acknowledged for ALD equipment support. Dr Vladimir Kornienko is acknowledged for helping with the transmission measurement. The characterization by XRD, TEM and FIB was carried out in the Nanomicroscopy Center of Aalto University. Publisher Copyright: © 2022 The Author(s). Published by IOP Publishing Ltd.

PY - 2023/1/15

Y1 - 2023/1/15

N2 - Atomic layer deposited (ALD) transparent thermoelectric materials enable the introduction of energy harvesting and sensing devices onto surfaces of various shapes and sizes in imperceptible manner. Amongst these materials, ZnO has shown promising results in terms of both thermoelectric and optical characteristics. The thermoelectric performance of ZnO can be further optimized by introducing extrinsic doping, to the realization of which ALD provides excellent control. Here, we explore the effects of sandwiching of ZrO2 layers with ZnO on glass substrates. The room-temperature thermoelectric power factor is maximised at 116μW m−1 K−2 with samples containing a 2% nominal percentage of ZrO2. The addition of ZrO2 layers is further shown to reduce the thermal conductivity, resulting in a 20.2% decrease from the undoped ZnO at 2% doping. Our results contribute to increasing the understanding of the effects of Zr inclusion in structural properties and growth of ALD ZnO, as well as the thermal and thermoelectric properties of Zr-doped ZnO films in general.

AB - Atomic layer deposited (ALD) transparent thermoelectric materials enable the introduction of energy harvesting and sensing devices onto surfaces of various shapes and sizes in imperceptible manner. Amongst these materials, ZnO has shown promising results in terms of both thermoelectric and optical characteristics. The thermoelectric performance of ZnO can be further optimized by introducing extrinsic doping, to the realization of which ALD provides excellent control. Here, we explore the effects of sandwiching of ZrO2 layers with ZnO on glass substrates. The room-temperature thermoelectric power factor is maximised at 116μW m−1 K−2 with samples containing a 2% nominal percentage of ZrO2. The addition of ZrO2 layers is further shown to reduce the thermal conductivity, resulting in a 20.2% decrease from the undoped ZnO at 2% doping. Our results contribute to increasing the understanding of the effects of Zr inclusion in structural properties and growth of ALD ZnO, as well as the thermal and thermoelectric properties of Zr-doped ZnO films in general.

KW - atomic layer deposition

KW - thermoelectric

KW - transparent

KW - zinc oxide

KW - zirconium

UR - https://www.scopus.com/pages/publications/85141890032

U2 - 10.1088/1361-6528/ac9980

DO - 10.1088/1361-6528/ac9980

M3 - Article

C2 - 36223693

AN - SCOPUS:85141890032

SN - 0957-4484

VL - 34

JO - Nanotechnology

JF - Nanotechnology

IS - 3

M1 - 035401

ER -

Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics

Abstract

Funding

Keywords

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PREIN: Photonics Research and Innovation

Energy harvesting for ICT from water evaporation

OtaNano

OtaNano - Nanofab

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Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Projects

PREIN: Photonics Research and Innovation

Energy harvesting for ICT from water evaporation

Equipment

OtaNano

OtaNano - Nanofab

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