Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditions

Vladyslav Matkivskyi, Oskari Leiviskä, Sigurd Wenner, Liu Hanchen, Ville Vahanissi, Hele Savin, Marisa Di Sabatino, Gabriella Tranell

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Abstract

Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl 4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiO x) film passivation properties, improving minority carrier lifetime (τ eff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlO y/TiO x) reduced the sheet resistance by 40% compared with pure TiO x. It was also revealed that the passivation quality of the (AlO y/TiO x) stack depends on the precursor and ratio of AlO y to TiO x deposition cycles.

Original languageEnglish
Article number5522
JournalMaterials
Volume16
Issue number16
DOIs
Publication statusPublished - Aug 2023
MoE publication typeA1 Journal article-refereed

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