Atomic layer deposition of quaternary oxide (La,Sr)CoO3-δ thin films

Esko Ahvenniemi, Mikko Matvejeff, Maarit Karppinen*

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-δ thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-δ system.

    Original languageEnglish
    Pages (from-to)8001-8006
    Number of pages6
    JournalDalton Transactions
    Volume44
    Issue number17
    DOIs
    Publication statusPublished - 7 May 2015
    MoE publication typeA1 Journal article-refereed

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