Abstract
A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-δ thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-δ system.
Original language | English |
---|---|
Pages (from-to) | 8001-8006 |
Number of pages | 6 |
Journal | Dalton Transactions |
Volume | 44 |
Issue number | 17 |
DOIs | |
Publication status | Published - 7 May 2015 |
MoE publication type | A1 Journal article-refereed |