Atomic layer deposition of p-type semiconducting thin films: a review

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Atomic layer deposition of p-type semiconducting thin films: a review. / Tripathi, Tripurari; Karppinen, Maarit.

In: Advanced Materials Interfaces, Vol. 4, No. 24, 1700300, 22.12.2017.

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@article{de75c04cb1de45309339444d42796eb5,
title = "Atomic layer deposition of p-type semiconducting thin films: a review",
abstract = "Semiconductors such as elemental silicon allowing both p-type and n-type doping are the backbone of the current microelectronics industry, while the continuous progress in fabrication techniques has been the key for ever-increasing integration density and device miniaturization. Similarly, in the strongly emerging field of transparent electronics both p-type and n-type compound semiconductors are needed that moreover should be transparent within the entire visible spectral range. Atomic layer deposition (ALD) has been the thin-film deposition method of choice for a number of challenging applications in microelectronics, and it would also be a highly relevant technology for transparent electronics. Currently the appropriate p-type semiconducting compounds are far outnumbered by the n-type compounds. Hence there is an obvious search for high-quality thin films of new p-type compound semiconductors. This is clearly seen in the increasing number of ALD papers published annualy on p-type semiconducting materials. In this overview the current state of research in the field is briefly presented; the ALD processes so far developed for the various p-type (transparent) conducting material candidates are summarized, and the most prominent electrical transport and optical properties achieved for these thin films are highlighted.",
keywords = "atomic layer deposition, p-type semiconductors, thin films, transparent conducting oxides",
author = "Tripurari Tripathi and Maarit Karppinen",
year = "2017",
month = "12",
day = "22",
doi = "10.1002/admi.201700300",
language = "English",
volume = "4",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "WILEY-BLACKWELL",
number = "24",

}

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TY - JOUR

T1 - Atomic layer deposition of p-type semiconducting thin films: a review

AU - Tripathi, Tripurari

AU - Karppinen, Maarit

PY - 2017/12/22

Y1 - 2017/12/22

N2 - Semiconductors such as elemental silicon allowing both p-type and n-type doping are the backbone of the current microelectronics industry, while the continuous progress in fabrication techniques has been the key for ever-increasing integration density and device miniaturization. Similarly, in the strongly emerging field of transparent electronics both p-type and n-type compound semiconductors are needed that moreover should be transparent within the entire visible spectral range. Atomic layer deposition (ALD) has been the thin-film deposition method of choice for a number of challenging applications in microelectronics, and it would also be a highly relevant technology for transparent electronics. Currently the appropriate p-type semiconducting compounds are far outnumbered by the n-type compounds. Hence there is an obvious search for high-quality thin films of new p-type compound semiconductors. This is clearly seen in the increasing number of ALD papers published annualy on p-type semiconducting materials. In this overview the current state of research in the field is briefly presented; the ALD processes so far developed for the various p-type (transparent) conducting material candidates are summarized, and the most prominent electrical transport and optical properties achieved for these thin films are highlighted.

AB - Semiconductors such as elemental silicon allowing both p-type and n-type doping are the backbone of the current microelectronics industry, while the continuous progress in fabrication techniques has been the key for ever-increasing integration density and device miniaturization. Similarly, in the strongly emerging field of transparent electronics both p-type and n-type compound semiconductors are needed that moreover should be transparent within the entire visible spectral range. Atomic layer deposition (ALD) has been the thin-film deposition method of choice for a number of challenging applications in microelectronics, and it would also be a highly relevant technology for transparent electronics. Currently the appropriate p-type semiconducting compounds are far outnumbered by the n-type compounds. Hence there is an obvious search for high-quality thin films of new p-type compound semiconductors. This is clearly seen in the increasing number of ALD papers published annualy on p-type semiconducting materials. In this overview the current state of research in the field is briefly presented; the ALD processes so far developed for the various p-type (transparent) conducting material candidates are summarized, and the most prominent electrical transport and optical properties achieved for these thin films are highlighted.

KW - atomic layer deposition

KW - p-type semiconductors

KW - thin films

KW - transparent conducting oxides

UR - http://www.scopus.com/inward/record.url?scp=85029215217&partnerID=8YFLogxK

U2 - 10.1002/admi.201700300

DO - 10.1002/admi.201700300

M3 - Review Article

VL - 4

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 24

M1 - 1700300

ER -

ID: 14137904