Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers

John Rönn; Lasse Karvonen; Alexander Pyymaki-Perros; Nasser N. Peyghambarian; Harri Lipsanen; Antti Säynätjoki; Zhipei Sun

doi:10.1117/12.2227640

Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers

John Rönn, Lasse Karvonen, Alexander Pyymaki-Perros, Nasser N. Peyghambarian, Harri Lipsanen, Antti Säynätjoki, Zhipei Sun

Research output: Contribution to conference › Paper › Scientific

Original language	English
Pages	98910Y
Number of pages	1
DOIs	https://doi.org/10.1117/12.2227640
Publication status	Published - 2016
MoE publication type	Not Eligible
Event	Silicon Photonics and Photonic Integrated Circuits - Brussels, Belgium Duration: 3 Apr 2016 → 7 Apr 2016 Conference number: 5

Conference

Conference	Silicon Photonics and Photonic Integrated Circuits
Country/Territory	Belgium
City	Brussels
Period	03/04/2016 → 07/04/2016

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10.1117/12.2227640

OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
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Facility/equipment: Facility

Cite this

@conference{54d6e3c2a9874d06a802cafe72a1cf5d,

title = "Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers",

author = "John R{\"o}nn and Lasse Karvonen and Alexander Pyymaki-Perros and Peyghambarian, {Nasser N.} and Harri Lipsanen and Antti S{\"a}yn{\"a}tjoki and Zhipei Sun",

year = "2016",

doi = "10.1117/12.2227640",

language = "English",

pages = "98910Y",

note = "Silicon Photonics and Photonic Integrated Circuits ; Conference date: 03-04-2016 Through 07-04-2016",

}

Rönn, J, Karvonen, L, Pyymaki-Perros, A, Peyghambarian, NN, Lipsanen, H, Säynätjoki, A & Sun, Z 2016, 'Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers', Paper presented at Silicon Photonics and Photonic Integrated Circuits , Brussels, Belgium, 03/04/2016 - 07/04/2016 pp. 98910Y. https://doi.org/10.1117/12.2227640

TY - CONF

T1 - Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers

AU - Rönn, John

AU - Karvonen, Lasse

AU - Pyymaki-Perros, Alexander

AU - Peyghambarian, Nasser N.

AU - Lipsanen, Harri

AU - Säynätjoki, Antti

AU - Sun, Zhipei

N1 - Conference code: 5

PY - 2016

Y1 - 2016

U2 - 10.1117/12.2227640

DO - 10.1117/12.2227640

M3 - Paper

SP - 98910Y

T2 - Silicon Photonics and Photonic Integrated Circuits

Y2 - 3 April 2016 through 7 April 2016

ER -

Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers

Conference

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OtaNano - Nanofab

Cite this