Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers

John Rönn, Lasse Karvonen, Alexander Pyymaki-Perros, Nasser N. Peyghambarian, Harri Lipsanen, Antti Säynätjoki, Zhipei Sun

Research output: Contribution to conferencePaperScientific

Original languageEnglish
Pages98910Y
Number of pages1
DOIs
Publication statusPublished - 2016
MoE publication typeNot Eligible
EventSilicon Photonics and Photonic Integrated Circuits - Brussels, Belgium
Duration: 3 Apr 20167 Apr 2016
Conference number: 5

Conference

ConferenceSilicon Photonics and Photonic Integrated Circuits
CountryBelgium
CityBrussels
Period03/04/201607/04/2016

Equipment

  • Cite this

    Rönn, J., Karvonen, L., Pyymaki-Perros, A., Peyghambarian, N. N., Lipsanen, H., Säynätjoki, A., & Sun, Z. (2016). Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers. 98910Y. Paper presented at Silicon Photonics and Photonic Integrated Circuits , Brussels, Belgium. https://doi.org/10.1117/12.2227640