Atomic layer deposition of HfO2 thin films exploiting novel cyclopentadienyl precursors at high temperatures

J. Niinistö, M. Putkonen, Lauri Niinistö, F. Song, P. Williams, P.N. Heys, R. Odedra

Research output: Contribution to journal › Article › Scientific › peer-review

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Cite this

@article{a34e735e897a498a8701c860f91fed7b,

title = "Atomic layer deposition of HfO2 thin films exploiting novel cyclopentadienyl precursors at high temperatures",

author = "J. Niinist{\"o} and M. Putkonen and Lauri Niinist{\"o} and F. Song and P. Williams and P.N. Heys and R. Odedra",

year = "2007",

language = "English",

volume = "19",

pages = "3319--3324",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "AMERICAN CHEMICAL SOCIETY",

number = "13",

}

TY - JOUR

T1 - Atomic layer deposition of HfO2 thin films exploiting novel cyclopentadienyl precursors at high temperatures

AU - Niinistö, J.

AU - Putkonen, M.

AU - Niinistö, Lauri

AU - Song, F.

AU - Williams, P.

AU - Heys, P.N.

AU - Odedra, R.

PY - 2007

Y1 - 2007

M3 - Article

VL - 19

SP - 3319

EP - 3324

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 13

ER -