Atomic layer deposition of HfO2 thin films exploiting novel cyclopentadienyl precursors at high temperatures

J. Niinistö, M. Putkonen, Lauri Niinistö, F. Song, P. Williams, P.N. Heys, R. Odedra

    Research output: Contribution to journalArticleScientificpeer-review

    49 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)3319-3324
    JournalChemistry of Materials
    Volume19
    Issue number13
    Publication statusPublished - 2007
    MoE publication typeA1 Journal article-refereed

    Cite this

    Niinistö, J., Putkonen, M., Niinistö, L., Song, F., Williams, P., Heys, P. N., & Odedra, R. (2007). Atomic layer deposition of HfO2 thin films exploiting novel cyclopentadienyl precursors at high temperatures. Chemistry of Materials, 19(13), 3319-3324.