Atomic Layer Deposition of Copper Metal Films from Cu(acac)2 and Hydroquinone Reductant

Tripurari Sharan Tripathi; Martin Wilken; Christian Hoppe; Teresa de los Arcos; Guido Grundmeier; Anjana Devi; Maarit Karppinen

doi:10.1002/adem.202100446

Atomic Layer Deposition of Copper Metal Films from Cu(acac)₂ and Hydroquinone Reductant

Tripurari Sharan Tripathi, Martin Wilken, Christian Hoppe, Teresa de los Arcos, Guido Grundmeier, Anjana Devi, Maarit Karppinen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

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Abstract

High-quality copper metal thin films are demanded for a number of advanced technologies. Herein, a facile ALD (atomic layer deposition) process for the fabrication of Cu metal films directly from two solid readily usable precursors, copper acetylacetonate as the source of copper and hydroquinone as the reductant is reported. This process yields highly crystalline, dense, specularly reflecting, and electrically conductive Cu films with an appreciably high growth rate of 1.8 Å/cycle at deposition temperatures as low as 160 to 240 ^°C.

Original language	English
Article number	2100446
Number of pages	6
Journal	Advanced Engineering Materials
Volume	23
Issue number	10
Early online date	26 Jul 2021
DOIs	https://doi.org/10.1002/adem.202100446
Publication status	Published - Oct 2021
MoE publication type	A1 Journal article-refereed

Keywords

ALD
Copper metal film
Cu(acac)
Direct reduction
Hydroquinone

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10.1002/adem.202100446Licence: CC BY-NC-ND

CHEM_Tripathi_et_al_Atomic_Layer_Deposition_2021_Advanced_Engineering_MaterialsFinal published version, 1.65 MBLicence: CC BY-NC-ND

Cite this

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title = "Atomic Layer Deposition of Copper Metal Films from Cu(acac)2 and Hydroquinone Reductant",

abstract = "High-quality copper metal thin films are demanded for a number of advanced technologies. Herein, a facile ALD (atomic layer deposition) process for the fabrication of Cu metal films directly from two solid readily usable precursors, copper acetylacetonate as the source of copper and hydroquinone as the reductant is reported. This process yields highly crystalline, dense, specularly reflecting, and electrically conductive Cu films with an appreciably high growth rate of 1.8 {\AA}/cycle at deposition temperatures as low as 160 to 240 °C.",

keywords = "ALD, Copper metal film, Cu(acac), Direct reduction, Hydroquinone",

author = "Tripathi, {Tripurari Sharan} and Martin Wilken and Christian Hoppe and {de los Arcos}, Teresa and Guido Grundmeier and Anjana Devi and Maarit Karppinen",

note = "Funding Information: The authors acknowledge the use of the Circular Raw MatTERS Finland Infrastructure (RAMI) at Aalto University. The authors at RUB and Paderborn University thank the SFB‐TR‐87 project for financial support. M.W. thanks COST‐Action HERALD for funding his research stay at Aalto University. Publisher Copyright: {\textcopyright} 2021 The Authors. Advanced Engineering Materials published by Wiley-VCH GmbH",

year = "2021",

month = oct,

doi = "10.1002/adem.202100446",

language = "English",

volume = "23",

journal = "Advanced Engineering Materials",

issn = "1438-1656",

publisher = "Wiley",

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AU - Tripathi, Tripurari Sharan

AU - Wilken, Martin

AU - Hoppe, Christian

AU - de los Arcos, Teresa

AU - Grundmeier, Guido

AU - Devi, Anjana

AU - Karppinen, Maarit

N1 - Funding Information: The authors acknowledge the use of the Circular Raw MatTERS Finland Infrastructure (RAMI) at Aalto University. The authors at RUB and Paderborn University thank the SFB‐TR‐87 project for financial support. M.W. thanks COST‐Action HERALD for funding his research stay at Aalto University. Publisher Copyright: © 2021 The Authors. Advanced Engineering Materials published by Wiley-VCH GmbH

PY - 2021/10

Y1 - 2021/10

N2 - High-quality copper metal thin films are demanded for a number of advanced technologies. Herein, a facile ALD (atomic layer deposition) process for the fabrication of Cu metal films directly from two solid readily usable precursors, copper acetylacetonate as the source of copper and hydroquinone as the reductant is reported. This process yields highly crystalline, dense, specularly reflecting, and electrically conductive Cu films with an appreciably high growth rate of 1.8 Å/cycle at deposition temperatures as low as 160 to 240 °C.

AB - High-quality copper metal thin films are demanded for a number of advanced technologies. Herein, a facile ALD (atomic layer deposition) process for the fabrication of Cu metal films directly from two solid readily usable precursors, copper acetylacetonate as the source of copper and hydroquinone as the reductant is reported. This process yields highly crystalline, dense, specularly reflecting, and electrically conductive Cu films with an appreciably high growth rate of 1.8 Å/cycle at deposition temperatures as low as 160 to 240 °C.

KW - ALD

KW - Copper metal film

KW - Cu(acac)

KW - Direct reduction

KW - Hydroquinone

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Atomic Layer Deposition of Copper Metal Films from Cu(acac)₂ and Hydroquinone Reductant

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Atomic Layer Deposition of Copper Metal Films from Cu(acac)2 and Hydroquinone Reductant

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Atomic Layer Deposition of Copper Metal Films from Cu(acac)₂ and Hydroquinone Reductant