Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur

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@article{e1c4228af8454537890c864a34c68b5a,
title = "Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur",
abstract = "A facile, yet precisely controlled and efficient atomic layer deposition (ALD) process is reported for high-quality copper(II) sulfide thin films based on elemental solid sulfur as the source for sulfur; Cu(acac)2 (acac: acetylacetonate) is used as the copper precursor. In the deposition temperature range as low as 140-160 °C, the process proceeds in an essentially ideal ALD manner and yields single-phase CuS thin films with appreciably high growth rate of ≈4 {\AA} per cycle. When the deposition temperature is increased above 160 °C the growth rate considerably increases and flake-like nanostructures evolve. All the as-deposited films are crystalline, highly conducting, and specularly reflecting. Seebeck coefficient measurements confirm the p-type conducting nature of the films. The direct optical bandgap as determined from UV-vis spectroscopic measurements varies in the range of 2.40-2.54 eV, depending on the deposition temperature.",
keywords = "Atomic layer deposition, Copper(II) sulfide, Sulfur, Thin film",
author = "Tripathi, {Tripurari S.} and Jouko Lahtinen and Maarit Karppinen",
year = "2018",
month = "5",
doi = "10.1002/admi.201701366",
language = "English",
volume = "5",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "WILEY-BLACKWELL",
number = "9",

}

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TY - JOUR

T1 - Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur

AU - Tripathi, Tripurari S.

AU - Lahtinen, Jouko

AU - Karppinen, Maarit

PY - 2018/5

Y1 - 2018/5

N2 - A facile, yet precisely controlled and efficient atomic layer deposition (ALD) process is reported for high-quality copper(II) sulfide thin films based on elemental solid sulfur as the source for sulfur; Cu(acac)2 (acac: acetylacetonate) is used as the copper precursor. In the deposition temperature range as low as 140-160 °C, the process proceeds in an essentially ideal ALD manner and yields single-phase CuS thin films with appreciably high growth rate of ≈4 Å per cycle. When the deposition temperature is increased above 160 °C the growth rate considerably increases and flake-like nanostructures evolve. All the as-deposited films are crystalline, highly conducting, and specularly reflecting. Seebeck coefficient measurements confirm the p-type conducting nature of the films. The direct optical bandgap as determined from UV-vis spectroscopic measurements varies in the range of 2.40-2.54 eV, depending on the deposition temperature.

AB - A facile, yet precisely controlled and efficient atomic layer deposition (ALD) process is reported for high-quality copper(II) sulfide thin films based on elemental solid sulfur as the source for sulfur; Cu(acac)2 (acac: acetylacetonate) is used as the copper precursor. In the deposition temperature range as low as 140-160 °C, the process proceeds in an essentially ideal ALD manner and yields single-phase CuS thin films with appreciably high growth rate of ≈4 Å per cycle. When the deposition temperature is increased above 160 °C the growth rate considerably increases and flake-like nanostructures evolve. All the as-deposited films are crystalline, highly conducting, and specularly reflecting. Seebeck coefficient measurements confirm the p-type conducting nature of the films. The direct optical bandgap as determined from UV-vis spectroscopic measurements varies in the range of 2.40-2.54 eV, depending on the deposition temperature.

KW - Atomic layer deposition

KW - Copper(II) sulfide

KW - Sulfur

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=85041658507&partnerID=8YFLogxK

U2 - 10.1002/admi.201701366

DO - 10.1002/admi.201701366

M3 - Article

VL - 5

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 9

M1 - 1701366

ER -

ID: 17691915