Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur

Tripurari S. Tripathi, Jouko Lahtinen, Maarit Karppinen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)
163 Downloads (Pure)


A facile, yet precisely controlled and efficient atomic layer deposition (ALD) process is reported for high-quality copper(II) sulfide thin films based on elemental solid sulfur as the source for sulfur; Cu(acac)2 (acac: acetylacetonate) is used as the copper precursor. In the deposition temperature range as low as 140-160 °C, the process proceeds in an essentially ideal ALD manner and yields single-phase CuS thin films with appreciably high growth rate of ≈4 Å per cycle. When the deposition temperature is increased above 160 °C the growth rate considerably increases and flake-like nanostructures evolve. All the as-deposited films are crystalline, highly conducting, and specularly reflecting. Seebeck coefficient measurements confirm the p-type conducting nature of the films. The direct optical bandgap as determined from UV-vis spectroscopic measurements varies in the range of 2.40-2.54 eV, depending on the deposition temperature.

Original languageEnglish
Article number1701366
JournalAdvanced Materials Interfaces
Issue number9
Early online date2018
Publication statusPublished - May 2018
MoE publication typeA1 Journal article-refereed


  • Atomic layer deposition
  • Copper(II) sulfide
  • Sulfur
  • Thin film

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