Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

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Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma. / Rontu, Ville; Sippola, Perttu; Broas, Mikael; Ross, Glenn; Lipsanen, Harri; Paulasto-Kröckel, Mervi; Franssila, Sami.

In: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, Vol. 36, No. 2, 021508, 01.2018.

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@article{5d006b54aeda44c39e07679ab6040b51,
title = "Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma",
abstract = "The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The films had a preferential orientation of the hexagonal AlN [002] direction normal to the silicon (100) wafer surface. With the plasma process, film stress control was possible and tensile, compressive, or zero stress films were obtained by simply adjusting the plasma time.",
keywords = "atomic layer deposition, crystal structure, piezoelectric films, optical properties, dermatology",
author = "Ville Rontu and Perttu Sippola and Mikael Broas and Glenn Ross and Harri Lipsanen and Mervi Paulasto-Kr{\"o}ckel and Sami Franssila",
year = "2018",
month = "1",
doi = "10.1116/1.5003381",
language = "English",
volume = "36",
journal = "JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

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TY - JOUR

T1 - Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

AU - Rontu, Ville

AU - Sippola, Perttu

AU - Broas, Mikael

AU - Ross, Glenn

AU - Lipsanen, Harri

AU - Paulasto-Kröckel, Mervi

AU - Franssila, Sami

PY - 2018/1

Y1 - 2018/1

N2 - The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The films had a preferential orientation of the hexagonal AlN [002] direction normal to the silicon (100) wafer surface. With the plasma process, film stress control was possible and tensile, compressive, or zero stress films were obtained by simply adjusting the plasma time.

AB - The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The films had a preferential orientation of the hexagonal AlN [002] direction normal to the silicon (100) wafer surface. With the plasma process, film stress control was possible and tensile, compressive, or zero stress films were obtained by simply adjusting the plasma time.

KW - atomic layer deposition

KW - crystal structure

KW - piezoelectric films

KW - optical properties

KW - dermatology

U2 - 10.1116/1.5003381

DO - 10.1116/1.5003381

M3 - Article

VL - 36

JO - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

JF - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

SN - 0734-2101

IS - 2

M1 - 021508

ER -

ID: 17151056