ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • D. Xie
  • T. Feng
  • Y Luo
  • X Han
  • T Ren
  • M Bosund
  • S. Li
  • V.-M. Airaksinen
  • Harri Lipsanen

  • S. Honkanen

Research units

Details

Original languageEnglish
Pages (from-to)369-377
JournalJOURNAL OF ADVANCED DIELECTRICS
Volume1
Issue number3
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

ID: 794660