Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Karina B Klepper, Ville Miikkulainen, Ola Nilsen, Helmer Fjellvåg, Ming Liu, Dhanadeep Dutta, David Gidley, William Lanford, Liza Ross, Han Li, Sean W King

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.
Original languageEnglish
Title of host publicationInnovative Interconnects/Electrodes for Advanced Devices, Flexible and Green-Energy Electronics
Pages15-20
DOIs
Publication statusPublished - 1 May 2015
MoE publication typeA4 Article in a conference publication

Publication series

NameMRS Online Proceedings Library
Number1791

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