Atomic Defects and Doping of Monolayer NbSe2

Lan Nguyen, Hannu Pekka Komsa, Ekaterina Khestanova, Reza J. Kashtiban, Jonathan J P Peters, Sean Lawlor, Ana M. Sanchez, Jeremy Sloan, Roman V. Gorbachev, Irina V. Grigorieva, Arkady V. Krasheninnikov, Sarah J. Haigh*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

20 Citations (Scopus)

Abstract

We have investigated the structure of atomic defects within monolayer NbSe2 encapsulated in graphene by combining atomic resolution transmission electron microscope imaging, density functional theory (DFT) calculations, and strain mapping using geometric phase analysis. We demonstrate the presence of stable Nb and Se monovacancies in monolayer material and reveal that Se monovacancies are the most frequently observed defects, consistent with DFT calculations of their formation energy. We reveal that adventitious impurities of C, N, and O can substitute into the NbSe2 lattice stabilizing Se divacancies. We further observe evidence of Pt substitution into both Se and Nb vacancy sites. This knowledge of the character and relative frequency of different atomic defects provides the potential to better understand and control the unusual electronic and magnetic properties of this exciting two-dimensional material.

Original languageEnglish
Pages (from-to)2894-2904
Number of pages11
JournalACS Nano
Volume11
Issue number3
DOIs
Publication statusPublished - 28 Mar 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • air-sensitive 2D crystals
  • atomic resolution TEM
  • defect dynamics
  • graphene encapsulation
  • monolayer NbSe
  • Pt doping
  • transition metal dichalcogenides

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    Nguyen, L., Komsa, H. P., Khestanova, E., Kashtiban, R. J., Peters, J. J. P., Lawlor, S., ... Haigh, S. J. (2017). Atomic Defects and Doping of Monolayer NbSe2. ACS Nano, 11(3), 2894-2904. https://doi.org/10.1021/acsnano.6b08036