Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

C. Medina-Bailon*, T. Sadi, C. Sampedro, J. L. Padilla, A. Godoy, L. Donetti, V. Georgiev, F. Gamiz, A. Asenov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

4 Citations (Scopus)

Abstract

The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

Original languageEnglish
Title of host publicationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
EditorsAndroula G. Nassiopoulou, Panagiotis Sarafis
PublisherIEEE
Pages144-147
Number of pages4
ISBN (Electronic)9781509053131
DOIs
Publication statusPublished - 29 Jun 2017
MoE publication typeA4 Article in a conference publication
EventJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS - Athens, Greece
Duration: 3 Apr 20175 Apr 2017

Conference

ConferenceJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS
Abbreviated titleEUROSOI-ULIS
CountryGreece
CityAthens
Period03/04/201705/04/2017

Keywords

  • direct tunneling
  • FDSOI
  • FinFET
  • gate leakage mechanism
  • MS-EMC
  • trap assisted tunneling

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