Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

C. Medina-Bailon; T. Sadi; C. Sampedro; J. L. Padilla; A. Godoy; L. Donetti; V. Georgiev; F. Gamiz; A. Asenov

doi:10.1109/ULIS.2017.7962585

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

C. Medina-Bailon^*, T. Sadi, C. Sampedro, J. L. Padilla, A. Godoy, L. Donetti, V. Georgiev, F. Gamiz, A. Asenov

^*Corresponding author for this work

Not published at Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

Original language	English
Title of host publication	Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
Editors	Androula G. Nassiopoulou, Panagiotis Sarafis
Publisher	IEEE
Pages	144-147
Number of pages	4
ISBN (Electronic)	9781509053131
DOIs	https://doi.org/10.1109/ULIS.2017.7962585
Publication status	Published - 29 Jun 2017
MoE publication type	A4 Conference publication
Event	Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS - Athens, Greece Duration: 3 Apr 2017 → 5 Apr 2017

Conference

Conference	Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS
Abbreviated title	EUROSOI-ULIS
Country/Territory	Greece
City	Athens
Period	03/04/2017 → 05/04/2017

Keywords

direct tunneling
FDSOI
FinFET
gate leakage mechanism
MS-EMC
trap assisted tunneling

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10.1109/ULIS.2017.7962585

Cite this

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V., Gamiz, F., & Asenov, A. (2017). Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. In A. G. Nassiopoulou, & P. Sarafis (Eds.), Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings (pp. 144-147). Article 7962585 IEEE. https://doi.org/10.1109/ULIS.2017.7962585

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title = "Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo",

abstract = "The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.",

keywords = "direct tunneling, FDSOI, FinFET, gate leakage mechanism, MS-EMC, trap assisted tunneling",

author = "C. Medina-Bailon and T. Sadi and C. Sampedro and Padilla, {J. L.} and A. Godoy and L. Donetti and V. Georgiev and F. Gamiz and A. Asenov",

year = "2017",

month = jun,

day = "29",

doi = "10.1109/ULIS.2017.7962585",

language = "English",

pages = "144--147",

editor = "Nassiopoulou, {Androula G.} and Panagiotis Sarafis",

booktitle = "Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings",

publisher = "IEEE",

address = "United States",

note = "Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS ; Conference date: 03-04-2017 Through 05-04-2017",

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Medina-Bailon, C, Sadi, T, Sampedro, C, Padilla, JL, Godoy, A, Donetti, L, Georgiev, V, Gamiz, F & Asenov, A 2017, Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. in AG Nassiopoulou & P Sarafis (eds), Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings., 7962585, IEEE, pp. 144-147, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, Athens, Greece, 03/04/2017. https://doi.org/10.1109/ULIS.2017.7962585

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. / Medina-Bailon, C.; Sadi, T.; Sampedro, C. et al.
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. ed. / Androula G. Nassiopoulou; Panagiotis Sarafis. IEEE, 2017. p. 144-147 7962585.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

AU - Medina-Bailon, C.

AU - Sadi, T.

AU - Sampedro, C.

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AU - Godoy, A.

AU - Donetti, L.

AU - Georgiev, V.

AU - Gamiz, F.

AU - Asenov, A.

PY - 2017/6/29

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AB - The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

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KW - FDSOI

KW - FinFET

KW - gate leakage mechanism

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KW - trap assisted tunneling

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Medina-Bailon C, Sadi T, Sampedro C, Padilla JL, Godoy A, Donetti L et al. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. In Nassiopoulou AG, Sarafis P, editors, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. IEEE. 2017. p. 144-147. 7962585 doi: 10.1109/ULIS.2017.7962585

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

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