Abstract
We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (63√×63√)−R30° unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H−SiC(0001) approaches ideal graphene.
Original language | English |
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Article number | 106804 |
Pages (from-to) | 1-6 |
Journal | Physical Review Letters |
Volume | 114 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2015 |
MoE publication type | A1 Journal article-refereed |
Keywords
- DFT
- graphene
- intercalated
- silicon carbide
- x-ray standing wave