Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons

Jaakko Härkönen, Eija Tuominen, Esa Tuovinen, Kati Lassila-Perini, J. Nysten, Paula Heikkilä, Victor Ovchinnikov, Marko Yli-Koski, L. Palmu, S. Kallijärvi, T. Alanko, P. Laitinen, A. Pirojenko, I. Riihimäki, G. Tiourine, A. Virtanen, S. Nummela

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)85-91
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume512
Issue number1-2
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • carrier lifetimes
  • detectors
  • radiation defect
  • surface photovoltage

Equipment

  • Cite this

    Härkönen, J., Tuominen, E., Tuovinen, E., Lassila-Perini, K., Nysten, J., Heikkilä, P., Ovchinnikov, V., Yli-Koski, M., Palmu, L., Kallijärvi, S., Alanko, T., Laitinen, P., Pirojenko, A., Riihimäki, I., Tiourine, G., Virtanen, A., & Nummela, S. (2003). Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 512(1-2), 85-91.