Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons

Jaakko Härkönen, Eija Tuominen, Esa Tuovinen, Kati Lassila-Perini, J. Nysten, Paula Heikkilä, Victor Ovchinnikov, Marko Yli-Koski, L. Palmu, S. Kallijärvi, T. Alanko, P. Laitinen, A. Pirojenko, I. Riihimäki, G. Tiourine, A. Virtanen, S. Nummela

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)85-91
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-2
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed


  • carrier lifetimes
  • detectors
  • radiation defect
  • surface photovoltage


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