Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60

Research output: Scientific - peer-reviewArticle

Details

Original languageEnglish
Article number133301
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Volume106
Issue number13
StatePublished - 2015
MoE publication typeA1 Journal article-refereed

Researchers

  • C.F.N. Marchiori
  • N.A.D. Yamamoto
  • C.F. Matos
  • Jiri Kujala
  • A.G. Macedo
  • Filip Tuomisto

  • A.J.G. Zarbin
  • M. Koehler
  • L.S. Roman

Research units

  • Universidade Tecnologica Federal do Parana
  • Universidade Federal do Parana

Abstract

In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C60 as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 °C. Space charge limited measurements of the hole mobility (μ) in PSiF-DBT give μ ∼ 1.0 × 10−4 cm2/(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron annihilation spectroscopy experiments revealed that PSiF-DBT films are well stacked even without the thermal treatment. The variations in the transport of holes upon annealing are then small. As a consequence, the PCE rise was mainly induced by the increase of the polymer surface roughness that leads to a more effective interface for exciton dissociation at the PSiF-DBT/fullerene heterojunction.

    Research areas

  • blend, polymer, semiconcting

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