Anisotropic Si Reactive Ion Etching in Fluorinated Plasma

A. Malinin, T. Majamaa, A. Hovinen

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)641-645
JournalMicroelectronic Engineering
Volume43-44
Publication statusPublished - 1998
MoE publication typeA1 Journal article-refereed

Keywords

  • Electron beam lithography
  • Fluorine process gases
  • Reactive Ion etching
  • SiliconF

Cite this

Malinin, A., Majamaa, T., & Hovinen, A. (1998). Anisotropic Si Reactive Ion Etching in Fluorinated Plasma. Microelectronic Engineering, 43-44, 641-645.