Anisotropic Si Reactive Ion Etching at Room Temperature

A. Malinin; T. Majamaa; A. Hovinen

Anisotropic Si Reactive Ion Etching at Room Temperature

A. Malinin, T. Majamaa, A. Hovinen

Department of Electrical Engineering and Automation

Research output: Working paper › Professional

Original language	English
Publication status	Published - 1997
MoE publication type	D4 Published development or research report or study

Publication series

Name	The Second International Conference on Low Dimensional Structures and Devices, Lissabon 19-21 May 1997
Publisher	Dr. M. Henini

Keywords

electron beam lithography
fluorine process gases
reactive ion etching
silicon

Cite this

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title = "Anisotropic Si Reactive Ion Etching at Room Temperature",

keywords = "electron beam lithography, fluorine process gases, reactive ion etching, silicon, electron beam lithography, fluorine process gases, reactive ion etching, silicon, electron beam lithography, fluorine process gases, reactive ion etching, silicon",

author = "A. Malinin and T. Majamaa and A. Hovinen",

year = "1997",

language = "English",

series = "The Second International Conference on Low Dimensional Structures and Devices, Lissabon 19-21 May 1997",

publisher = "Dr. M. Henini",

type = "WorkingPaper",

institution = "Dr. M. Henini",

}

TY - UNPB

T1 - Anisotropic Si Reactive Ion Etching at Room Temperature

AU - Malinin, A.

AU - Majamaa, T.

AU - Hovinen, A.

PY - 1997

Y1 - 1997

KW - electron beam lithography

KW - fluorine process gases

KW - reactive ion etching

KW - silicon

KW - electron beam lithography

KW - fluorine process gases

KW - reactive ion etching

KW - silicon

KW - electron beam lithography

KW - fluorine process gases

KW - reactive ion etching

KW - silicon

M3 - Working paper

T3 - The Second International Conference on Low Dimensional Structures and Devices, Lissabon 19-21 May 1997

BT - Anisotropic Si Reactive Ion Etching at Room Temperature

ER -