Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

Masaki Fujikane; Toshiya Yokogawa; Shijo Nagao; Roman Nowak

doi:10.1063/1.3665250

Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

Masaki Fujikane
, Toshiya Yokogawa
, Shijo Nagao
, Roman Nowak

Department of Chemistry and Materials Science

Panasonic Corporation
Norwegian University of Science and Technology

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Article number	222106
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3665250
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed

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10.1063/1.3665250

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title = "Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal",

author = "Masaki Fujikane and Toshiya Yokogawa and Shijo Nagao and Roman Nowak",

year = "2011",

doi = "10.1063/1.3665250",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

AU - Fujikane, Masaki

AU - Yokogawa, Toshiya

AU - Nagao, Shijo

AU - Nowak, Roman

PY - 2011

Y1 - 2011

UR - http://dx.doi.org/10.1063/1.3665250

U2 - 10.1063/1.3665250

DO - 10.1063/1.3665250

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222106

ER -

Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

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Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

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