ANALYTICALLY EXTRACTED ZTC POINT FOR GAAS-MESFET

P. Ojala, Kimmo Kaski

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Some current-voltage characteristics of GaAs MESFET at elevated temperatures have been measured and the existence of zero temperature coefficient (ZTC) points in the drain current of DFETs and EFETs are presented. At these points of operation, with a specific value of gate bias, the device drain current characteristics are stable in temperature. The ZTC point for the saturation region of operation is presented for both types of devices, whereas for the linear region of operation the ZTC point is reached only with DFET. The existence of the ZTC point is shown to depend critically on the flow of leakage currents. The ZTC points are analysed with an analytical model that is capable of estimating the corresponding drain current and gate bias values. In addition, an analytical model for the threshold voltage and transconductance parameter is discussed by starting from device physical and geometrical parameters for finding the ZTC point. The analytically solved results are shown to correspond closely to the experimental results.
Original languageEnglish
Pages (from-to)424-430
JournalIEE Proceedings G: Circuits, Devices and Systems
Volume140
Issue number6
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Keywords

  • Gallium compounds
  • MESFETs
  • semiconductor device modeling

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