Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Optogan
  • RAS - Ioffe Physico Technical Institute

Details

Original languageEnglish
Pages (from-to)59-64
Number of pages6
JournalJournal of Crystal Growth
Volume344
Issue number1
Publication statusPublished - 1 Apr 2012
MoE publication typeA1 Journal article-refereed

ID: 802033