Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	8294-8297
Journal	Journal of Physics D: Applied Physics
Volume	79
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Keywords

@article{675198e60f8b49e3a352b7d7fe0e0961,

title = "Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "P. McNally and P. Herbert and T. Tuomi and M. Karilahti and J. Higgins",

year = "1996",

language = "English",

volume = "79",

pages = "8294--8297",

journal = "Journal of Physics D: Applied Physics",

issn = "1361-6463",

publisher = "Institute of Physics Publishing",

}

TY - JOUR

T1 - Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes

AU - McNally, P.

AU - Herbert, P.

AU - Tuomi, T.

AU - Karilahti, M.

AU - Higgins, J.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Article

SN - 1361-6463

VL - 79

SP - 8294

EP - 8297

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

ER -