Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes

P. McNally, P. Herbert, T. Tuomi, M. Karilahti, J. Higgins

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)8294-8297
    JournalJournal of Physics D: Applied Physics
    Volume79
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

    Keywords

    • optoelectronics
    • semiconductors

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