Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Polytechnic University of Catalonia
  • Swiss Federal Institute of Technology Lausanne

Details

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume142
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

    Research areas

  • Al2O3, atomic layer deposition, nano-texturing, negative charge, reactive ion etching, surface passivation

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ID: 2019184