Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

Riikka L. Puurunen

doi:10.1063/1.1689732

Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

Riikka L. Puurunen^*

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

88 Citations (Scopus)

Abstract

The substrate-inhibited growth in the hafnium tetrachloride (HfCL ₄)/water (H₂O) atomic layer deposition (ALD) process was studied with two models of ALD. The growth-per-cycle (GPC) of substrate-inhibited (SI)-ALD, increased in the beginning and reached a constant value during the growth process. The chemical basis of modeling were formed by the ligand exchange reaction of hafnium tetrachloride with one surface hydroxyl (OH) group. The steric hinderance in ALD was evaluatevaluated using model A and C.

Original language	English
Pages (from-to)	4777-4786
Number of pages	10
Journal	Journal of Applied Physics
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.1689732
Publication status	Published - 1 May 2004
MoE publication type	A1 Journal article-refereed

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10.1063/1.1689732

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Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

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