Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

Riikka L. Puurunen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

78 Citations (Scopus)

Abstract

The substrate-inhibited growth in the hafnium tetrachloride (HfCL 4)/water (H2O) atomic layer deposition (ALD) process was studied with two models of ALD. The growth-per-cycle (GPC) of substrate-inhibited (SI)-ALD, increased in the beginning and reached a constant value during the growth process. The chemical basis of modeling were formed by the ligand exchange reaction of hafnium tetrachloride with one surface hydroxyl (OH) group. The steric hinderance in ALD was evaluatevaluated using model A and C.

Original languageEnglish
Pages (from-to)4777-4786
Number of pages10
JournalJournal of Applied Physics
Volume95
Issue number9
DOIs
Publication statusPublished - 1 May 2004
MoE publication typeA1 Journal article-refereed

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