Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

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Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy. / Borodin, B R; Alekseev, P A; Dunaevskiy, M S; Khayrudinov, V; Lipsanen, H.

In: Journal of Physics: Conference Series, Vol. 1410, No. 1, 012228, 2019.

Research output: Contribution to journalConference articleScientificpeer-review

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@article{d79e42450f574a3fb6a3ca8187932bbf,
title = "Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy",
abstract = "This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.",
author = "Borodin, {B R} and Alekseev, {P A} and Dunaevskiy, {M S} and V Khayrudinov and H Lipsanen",
year = "2019",
doi = "10.1088/1742-6596/1410/1/012228",
language = "English",
volume = "1410",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

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TY - JOUR

T1 - Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

AU - Borodin, B R

AU - Alekseev, P A

AU - Dunaevskiy, M S

AU - Khayrudinov, V

AU - Lipsanen, H

PY - 2019

Y1 - 2019

N2 - This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

AB - This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

U2 - 10.1088/1742-6596/1410/1/012228

DO - 10.1088/1742-6596/1410/1/012228

M3 - Conference article

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012228

ER -

ID: 40208333