Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

B R Borodin; P A Alekseev; M S Dunaevskiy; V Khayrudinov; H Lipsanen

doi:10.1088/1742-6596/1410/1/012228

Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

B R Borodin, P A Alekseev, M S Dunaevskiy, V Khayrudinov, H Lipsanen

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Abstract

This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

Original language	English
Article number	012228
Journal	Journal of Physics: Conference Series
Volume	1410
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1410/1/012228
Publication status	Published - 2019
MoE publication type	A4 Conference publication
Event	International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Russian Federation Duration: 22 Apr 2019 → 25 Apr 2019 Conference number: 6

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Borodin_2019_J._Phys.__Conf._Ser._1410_012228Final published version, 772 KBLicence: CC BY

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title = "Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy",

abstract = "This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.",

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doi = "10.1088/1742-6596/1410/1/012228",

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journal = "Journal of Physics: Conference Series",

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T1 - Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

AU - Borodin, B R

AU - Alekseev, P A

AU - Dunaevskiy, M S

AU - Khayrudinov, V

AU - Lipsanen, H

N1 - Conference code: 6

PY - 2019

Y1 - 2019

N2 - This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

AB - This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

U2 - 10.1088/1742-6596/1410/1/012228

DO - 10.1088/1742-6596/1410/1/012228

M3 - Conference article

SN - 1742-6588

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012228

T2 - International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 22 April 2019 through 25 April 2019

ER -

Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

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