This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2019|
|MoE publication type||A4 Article in a conference publication|
|Event||International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Russian Federation|
Duration: 22 Apr 2019 → 25 Apr 2019
Conference number: 6