Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates

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Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates. / Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T.; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.

In: Japanese Journal of Applied Physics, Vol. 52, No. 1S, 01AF01, 01.2013, p. 1-3.

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Suihkonen, Sami ; Ali, Muhammad ; Törmä, Pekka T. ; Sintonen, Sakari ; Svensk, Olli ; Sopanen, Markku ; Lipsanen, Harri ; Nevedomsky, Vladimir N. ; Bert, Nikolay A. / Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 1S. pp. 1-3.

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@article{22a018be6fe24d02a929aef957fc5e00,
title = "Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates",
abstract = "We report on patterning and subsequent metal-organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. Templates with a hexagonal hole pattern were prepared by photolithography and dry etching. After GaN overgrowth voids were formed at the GaN/sapphire interface. Threading dislocations were found to bend and terminate at void sidewalls during the overgrowth resulting in improved material quality. The dislocations were analyzed by transmission electron microscopy combined with energy dispersive X-ray spectroscopy. Areas with increased Ga concentration were found at the tips of coalesced voids that introduced additional dislocations to the overgrown films.",
author = "Sami Suihkonen and Muhammad Ali and T{\"o}rm{\"a}, {Pekka T.} and Sakari Sintonen and Olli Svensk and Markku Sopanen and Harri Lipsanen and Nevedomsky, {Vladimir N.} and Bert, {Nikolay A.}",
year = "2013",
month = "1",
doi = "10.7567/JJAP.52.01AF01",
language = "English",
volume = "52",
pages = "1--3",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1S",

}

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TY - JOUR

T1 - Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates

AU - Suihkonen, Sami

AU - Ali, Muhammad

AU - Törmä, Pekka T.

AU - Sintonen, Sakari

AU - Svensk, Olli

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Nevedomsky, Vladimir N.

AU - Bert, Nikolay A.

PY - 2013/1

Y1 - 2013/1

N2 - We report on patterning and subsequent metal-organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. Templates with a hexagonal hole pattern were prepared by photolithography and dry etching. After GaN overgrowth voids were formed at the GaN/sapphire interface. Threading dislocations were found to bend and terminate at void sidewalls during the overgrowth resulting in improved material quality. The dislocations were analyzed by transmission electron microscopy combined with energy dispersive X-ray spectroscopy. Areas with increased Ga concentration were found at the tips of coalesced voids that introduced additional dislocations to the overgrown films.

AB - We report on patterning and subsequent metal-organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. Templates with a hexagonal hole pattern were prepared by photolithography and dry etching. After GaN overgrowth voids were formed at the GaN/sapphire interface. Threading dislocations were found to bend and terminate at void sidewalls during the overgrowth resulting in improved material quality. The dislocations were analyzed by transmission electron microscopy combined with energy dispersive X-ray spectroscopy. Areas with increased Ga concentration were found at the tips of coalesced voids that introduced additional dislocations to the overgrown films.

UR - http://www.scopus.com/inward/record.url?scp=84872871963&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.01AF01

DO - 10.7567/JJAP.52.01AF01

M3 - Article

VL - 52

SP - 1

EP - 3

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 1S

M1 - 01AF01

ER -

ID: 4219192