Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates

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Research units

  • RAS - Ioffe Physico Technical Institute


We report on patterning and subsequent metal-organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. Templates with a hexagonal hole pattern were prepared by photolithography and dry etching. After GaN overgrowth voids were formed at the GaN/sapphire interface. Threading dislocations were found to bend and terminate at void sidewalls during the overgrowth resulting in improved material quality. The dislocations were analyzed by transmission electron microscopy combined with energy dispersive X-ray spectroscopy. Areas with increased Ga concentration were found at the tips of coalesced voids that introduced additional dislocations to the overgrown films.


Original languageEnglish
Article number01AF01
Pages (from-to)1-3
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number1S
Publication statusPublished - Jan 2013
MoE publication typeA1 Journal article-refereed

ID: 4219192