An X-Ray topographic analysis of the crystal quality of globally available SiC wafers

Research output: Contribution to journalArticle

Researchers

  • Ian C. Brazil
  • Patric J. McNally
  • N. Ren
  • Lisa "O'Reilly"
  • Andreas Danilewsky
  • Turkka O. Tuomi
  • Aapo Lankinen
  • Antti Säynätjoki
  • Rolf Simon
  • Stanislav Soloviev
  • Larry B. Rowland
  • Peter M. Sandvik

Research units

Details

Original languageEnglish
Pages (from-to)227-230
JournalMaterials Science Forum
Issue number556-557
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

    Research areas

  • SiC, synchrotron topography

ID: 3630849