An X-Ray topographic analysis of the crystal quality of globally available SiC wafers

Ian C. Brazil, Patric J. McNally, N. Ren, Lisa "O'Reilly", Andreas Danilewsky, Turkka O. Tuomi, Aapo Lankinen, Antti Säynätjoki, Rolf Simon, Stanislav Soloviev, Larry B. Rowland, Peter M. Sandvik

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)
    Original languageEnglish
    Pages (from-to)227-230
    JournalMaterials Science Forum
    Issue number556-557
    Publication statusPublished - 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • SiC
    • synchrotron topography

    Cite this

    Brazil, I. C., McNally, P. J., Ren, N., "O'Reilly", L., Danilewsky, A., Tuomi, T. O., Lankinen, A., Säynätjoki, A., Simon, R., Soloviev, S., Rowland, L. B., & Sandvik, P. M. (2007). An X-Ray topographic analysis of the crystal quality of globally available SiC wafers. Materials Science Forum, (556-557), 227-230.