Abstract
A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2-x/AlOy/Al structure, is demonstrated. Arising from the photoinduced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.
| Original language | English |
|---|---|
| Pages (from-to) | 2797-2803 |
| Number of pages | 7 |
| Journal | Advanced Materials |
| Volume | 27 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 6 May 2015 |
| MoE publication type | A1 Journal article-refereed |
Funding
The authors thank Prof. Shibing Long for the help of sample preparation for TEM measurements. The authors acknowledge the financial supports from the State Key Project of Fundamental Research of China (973 Program, 2012CB933004), National Natural Science Foundation of China (51303194, 61328402, 11474295, 11274322, and 61306152), the Instrument Developing Project of the Chinese Academy of Sciences (YZ201327), the Youth Innovation Promotion Association of the Chinese Academy of Sciences, Ningbo Major Project for Science and Technology (2014B11011), Ningbo Natural Science Foundations (2013A610031), and Ningbo International Cooperation Projects (2012D10018 and 2014D10005).
Keywords
- LIGHT
- ELECTRONICS
- INTERFACE
- DEVICE
- OXIDE
- CHIP