An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

Hongwei Tan, Gang Liu*, Xiaojian Zhu, Huali Yang, Bin Chen, Xinxin Chen, Jie Shang, Wei D. Lu, Yihong Wu, Run-Wei Li

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2-x/AlOy/Al structure, is demonstrated. Arising from the photoinduced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.

Original languageEnglish
Pages (from-to)2797-2803
Number of pages7
JournalAdvanced Materials
Volume27
Issue number17
DOIs
Publication statusPublished - 6 May 2015
MoE publication typeA1 Journal article-refereed

Keywords

  • LIGHT
  • ELECTRONICS
  • INTERFACE
  • DEVICE
  • OXIDE
  • CHIP

Cite this

Tan, H., Liu, G., Zhu, X., Yang, H., Chen, B., Chen, X., Shang, J., Lu, W. D., Wu, Y., & Li, R-W. (2015). An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions. Advanced Materials, 27(17), 2797-2803. https://doi.org/10.1002/adma.201500039