An MMIC Low-Noise Amplifier Design Technique

Mikko Varonen*, Rodrigo Reeves, Pekka Kangaslahti, Lorene Samoska, Jacob W. Kooi, Kieran Cleary, Rohit S. Gawande, Ahmed Akgiray, Andy Fung, Todd Gaier, Sander Weinreb, Anthony C. S. Readhead, Charles Lawrence, Stephen Sarkozy, Richard Lai

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    22 Citations (Scopus)

    Abstract

    In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.

    Original languageEnglish
    Pages (from-to)826-835
    Number of pages10
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume64
    Issue number3
    DOIs
    Publication statusPublished - Mar 2016
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Cryogenic
    • InP HEMT
    • low-noise amplifiers (LNAs)
    • monolithic microwave integrated circuit (MMIC)
    • BAND
    • TEMPERATURE
    • POWER
    • GHZ
    • THZ

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