An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Pekka T. Törmä*, Muhammad Ali, Olli Svensk, Sakari Sintonen, Pasi Kostamo, Sami Suihkonen, Markku Sopanen, Harri Lipsanen, Maxim A. Odnoblyudov, Vladislav E. Bougrov

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface. © 2009 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)4911-4915
    Number of pages5
    JournalPhysica B: Condensed Matter
    Volume404
    Issue number23-24
    DOIs
    Publication statusPublished - 15 Dec 2009
    MoE publication typeA1 Journal article-refereed

    Keywords

    • MOCVD
    • Nitrides
    • Semiconducting III-V materials

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