An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production

Haibing Huang; Jun Lv; Lichun Wang; Jianbo Wang; Weicheng Zhu; Lisa Mandrell; Jim Sullivan; Babak Adibi; Chris Smith; Hannu Laine; Hele Savin

doi:10.1109/PVSC.2015.7356059

An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production

Haibing Huang, Jun Lv, Lichun Wang, Jianbo Wang, Weicheng Zhu, Lisa Mandrell, Jim Sullivan, Babak Adibi, Chris Smith, Hannu Laine, Hele Savin

Electron Physics Group (EPG)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

This paper presents an extendible beyond 20% efficiency cost-efficient roadmap for bifacial solar cell, which is suitable to both p-type and n-type substrate. The roadmap is based on boron & phosphorus implantation and screen print technology. We experimentally demonstrate here bifacial cells using industrial p-type c-Si substrate with front side efficiency of 20% and rear side efficiency of 16-16.5%. Due to the bifacial generation of electricity, these cells are expected to perform at high effective efficiency under various environments with different ground reflectance. Furthermore, very high quality boron implanted emitter with emitter saturation current as low as 5E-15 Acm-2 and open circuit voltage above 655 mV was obtained, which demonstrates the potential of implantation technology for the production of also other high efficiency cell architectures.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	IEEE
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356059
Publication status	Published - 14 Dec 2015
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialist Conference - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 Conference number: 42

Conference

Conference	IEEE Photovoltaic Specialist Conference
Abbreviated title	PVSC
Country/Territory	United States
City	New Orleans
Period	14/06/2015 → 19/06/2015

Keywords

boron and phosphorus implantation
c-Si cell
costefficient bifacial cell
post implantation anneal
surface passivation

Access to Document

10.1109/PVSC.2015.7356059

Cite this

Huang, H., Lv, J., Wang, L., Wang, J., Zhu, W., Mandrell, L., Sullivan, J., Adibi, B., Smith, C., Laine, H., & Savin, H. (2015). An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356059 IEEE. https://doi.org/10.1109/PVSC.2015.7356059

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title = "An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production",

abstract = "This paper presents an extendible beyond 20% efficiency cost-efficient roadmap for bifacial solar cell, which is suitable to both p-type and n-type substrate. The roadmap is based on boron & phosphorus implantation and screen print technology. We experimentally demonstrate here bifacial cells using industrial p-type c-Si substrate with front side efficiency of 20% and rear side efficiency of 16-16.5%. Due to the bifacial generation of electricity, these cells are expected to perform at high effective efficiency under various environments with different ground reflectance. Furthermore, very high quality boron implanted emitter with emitter saturation current as low as 5E-15 Acm-2 and open circuit voltage above 655 mV was obtained, which demonstrates the potential of implantation technology for the production of also other high efficiency cell architectures.",

keywords = "boron and phosphorus implantation, c-Si cell, costefficient bifacial cell, post implantation anneal, surface passivation",

author = "Haibing Huang and Jun Lv and Lichun Wang and Jianbo Wang and Weicheng Zhu and Lisa Mandrell and Jim Sullivan and Babak Adibi and Chris Smith and Hannu Laine and Hele Savin",

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language = "English",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

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Huang, H, Lv, J, Wang, L, Wang, J, Zhu, W, Mandrell, L, Sullivan, J, Adibi, B, Smith, C, Laine, H & Savin, H 2015, An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356059, IEEE, IEEE Photovoltaic Specialist Conference, New Orleans, United States, 14/06/2015. https://doi.org/10.1109/PVSC.2015.7356059

An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production. / Huang, Haibing; Lv, Jun; Wang, Lichun et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. IEEE, 2015. 7356059.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Huang, Haibing

AU - Lv, Jun

AU - Wang, Lichun

AU - Wang, Jianbo

AU - Zhu, Weicheng

AU - Mandrell, Lisa

AU - Sullivan, Jim

AU - Adibi, Babak

AU - Smith, Chris

AU - Laine, Hannu

AU - Savin, Hele

N1 - Conference code: 42

PY - 2015/12/14

Y1 - 2015/12/14

N2 - This paper presents an extendible beyond 20% efficiency cost-efficient roadmap for bifacial solar cell, which is suitable to both p-type and n-type substrate. The roadmap is based on boron & phosphorus implantation and screen print technology. We experimentally demonstrate here bifacial cells using industrial p-type c-Si substrate with front side efficiency of 20% and rear side efficiency of 16-16.5%. Due to the bifacial generation of electricity, these cells are expected to perform at high effective efficiency under various environments with different ground reflectance. Furthermore, very high quality boron implanted emitter with emitter saturation current as low as 5E-15 Acm-2 and open circuit voltage above 655 mV was obtained, which demonstrates the potential of implantation technology for the production of also other high efficiency cell architectures.

AB - This paper presents an extendible beyond 20% efficiency cost-efficient roadmap for bifacial solar cell, which is suitable to both p-type and n-type substrate. The roadmap is based on boron & phosphorus implantation and screen print technology. We experimentally demonstrate here bifacial cells using industrial p-type c-Si substrate with front side efficiency of 20% and rear side efficiency of 16-16.5%. Due to the bifacial generation of electricity, these cells are expected to perform at high effective efficiency under various environments with different ground reflectance. Furthermore, very high quality boron implanted emitter with emitter saturation current as low as 5E-15 Acm-2 and open circuit voltage above 655 mV was obtained, which demonstrates the potential of implantation technology for the production of also other high efficiency cell architectures.

KW - boron and phosphorus implantation

KW - c-Si cell

KW - costefficient bifacial cell

KW - post implantation anneal

KW - surface passivation

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BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - IEEE

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Y2 - 14 June 2015 through 19 June 2015

ER -

An extendible beyond 20% efficiency cost-efficient bifacial cell using boron & phosphorus implantation technology and its prospects for the future production

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