An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography

P.J. McNally; J. Curley; A. Krier; Y. Mao; J. Richardson; T. Tuomi; M. Taskinen; R. Rantamäki; E. Prieur; A. Danilewsky

An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography

P.J. McNally, J. Curley, A. Krier, Y. Mao, J. Richardson, T. Tuomi, M. Taskinen, R. Rantamäki, E. Prieur, A. Danilewsky

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Original language	English
Pages (from-to)	345-349
Journal	Semiconductor Science and Technology
Volume	13
Publication status	Published - 1998
MoE publication type	A1 Journal article-refereed

Keywords

InGaAs
Phase epitaxial
x-ray topography

Cite this

@article{3dc566a2168444f5a48dd9fdcb8982f0,

title = "An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography",

keywords = "InGaAs, Phase epitaxial, x-ray topography, InGaAs, Phase epitaxial, x-ray topography, InGaAs, Phase epitaxial, x-ray topography",

author = "P.J. McNally and J. Curley and A. Krier and Y. Mao and J. Richardson and T. Tuomi and M. Taskinen and R. Rantam{\"a}ki and E. Prieur and A. Danilewsky",

year = "1998",

language = "English",

volume = "13",

pages = "345--349",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

}

An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography. / McNally, P.J.; Curley, J.; Krier, A.; Mao, Y.; Richardson, J.; Tuomi, T.; Taskinen, M.; Rantamäki, R.; Prieur, E.; Danilewsky, A.

In: Semiconductor Science and Technology, Vol. 13, 1998, p. 345-349.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography

AU - McNally, P.J.

AU - Curley, J.

AU - Krier, A.

AU - Mao, Y.

AU - Richardson, J.

AU - Tuomi, T.

AU - Taskinen, M.

AU - Rantamäki, R.

AU - Prieur, E.

AU - Danilewsky, A.

PY - 1998

Y1 - 1998

KW - InGaAs

KW - Phase epitaxial

KW - x-ray topography

KW - InGaAs

KW - Phase epitaxial

KW - x-ray topography

KW - InGaAs

KW - Phase epitaxial

KW - x-ray topography

M3 - Article

VL - 13

SP - 345

EP - 349

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -