An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography

P.J. McNally, J. Curley, A. Krier, Y. Mao, J. Richardson, T. Tuomi, M. Taskinen, R. Rantamäki, E. Prieur, A. Danilewsky

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)345-349
    JournalSemiconductor Science and Technology
    Volume13
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed

    Keywords

    • InGaAs
    • Phase epitaxial
    • x-ray topography

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