Abstract
Currently, driving power circuits at high switching frequency is performed in order to downsize and lighten switching power supplies. Along with it, wide band gap semiconductor devices, GaN and SiC, have attracted attention. However, there is a great constrain related to the false turn-on phenomenon produced by gate noise because these wide band gap semiconductor devices have low threshold voltage. If the false turn-on phenomenon occurs, the efficiency of the power supply decreases. Therefore, this paper analyzes the gate noise performance using simulation and experimental tests focusing on the parasitic inductance of the power devices terminals. As a result, it was found that the gate noises can be related to the recovery current of the body diodes. Additionally, this analysis was theorized by the comparison between the experimental results and the theoretical equation using an equivalent circuit.
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE Energy Conversion Congress and Exposition (ECCE) |
| Pages | 2988-2993 |
| Number of pages | 6 |
| ISBN (Electronic) | 978-1-4799-5776-7 |
| DOIs | |
| Publication status | Published - 1 Sept 2014 |
| MoE publication type | A4 Conference publication |
Keywords
- equivalent circuits
- gallium compounds
- power HEMT
- power MOSFET
- semiconductor device noise
- silicon compounds
- switched mode power supplies
- wide band gap semiconductors
- GaN
- SiC
- equivalent circuit
- false turn-on mechanism
- gate noise
- parasitic inductance
- power devices
- power supply efficiency
- recovery current
- switching power supplies
- Gallium nitride
- HEMTs
- Immune system
- Inductance
- Light emitting diodes
- Logic gates
- Noise