Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

Filip Tuomisto, Vera Prozheeva, Ilja Makkonen, Thomas H. Myers, Michal Bockowski, Henryk Teisseyre

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)
48 Downloads (Pure)

Abstract

We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

Original languageEnglish
Article number196404
Pages (from-to)1-5
JournalPhysical Review Letters
Volume119
Issue number19
DOIs
Publication statusPublished - 9 Nov 2017
MoE publication typeA1 Journal article-refereed

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  • Projects

    Large-scale electronic structure techniques for advanced materials characterization

    Makkonen, I.

    01/09/201522/09/2019

    Project: Academy of Finland: Other research funding

    Large-scale electronic structure techniques for advanced materials characterization

    Makkonen, I., Simula, K. & Prozheeva, V.

    01/09/201521/09/2018

    Project: Academy of Finland: Other research funding

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    Science-IT

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    School of Science

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    Researchers create gallium nitride semiconductors doped with beryllium

    Filip Tuomisto

    10/11/2017

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