Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

Research output: Contribution to journalArticle

Details

Original languageEnglish
Article number196404
Pages (from-to)1-5
JournalPhysical Review Letters
Volume119
Issue number19
StatePublished - 9 Nov 2017
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • Texas State University
  • Polish Academy of Sciences
  • Institute of Physics of the Polish Academy of Sciences

Abstract

We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

ID: 16138627