Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system

Tomi Laurila*, Kejun Zeng, Jorma K. Kivilahti, Jyrki Molarius, Ilkka Suni

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    25 Citations (Scopus)

    Abstract

    An amorphous Ta(O,C) x layer was found to form at the TaC/Cu interface in the Si/TaC/Cu metallization system. The formation of the layer was induced by oxygen trapped in the as-deposited films, since on the basis of thermodynamic evaluation of the ternary Ta-C-O system, the dissociation of the TaC layer and the formation of the Ta 2O 5 and graphite can be expected to occur during subsequent annealings in this case. However, as observed experimentally, the formation of the amorphous Ta(O,C) x preceded the formation of the stable tantalum oxide.

    Original languageEnglish
    Pages (from-to)938-940
    Number of pages3
    JournalApplied Physics Letters
    Volume80
    Issue number6
    DOIs
    Publication statusPublished - 11 Feb 2002
    MoE publication typeA1 Journal article-refereed

    Keywords

    • diffusion barrier
    • thermodynamics

    Fingerprint Dive into the research topics of 'Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system'. Together they form a unique fingerprint.

    Cite this