Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

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Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition. / Seppänen, Heli; Kim, Iurii; Etula, Jarkko; Ubyivovk, Evgeniy; Buravlev, Alexey; Lipsanen, Harri.

In: Materials, Vol. 12, No. 3, 406, 28.01.2019.

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@article{93cd7b23245e4d74809f1507b083ca28,
title = "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition",
abstract = "Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.",
keywords = "AIN, ALA, ALD, buffer layers, transition layer, MOCVD, regrowth",
author = "Heli Sepp{\"a}nen and Iurii Kim and Jarkko Etula and Evgeniy Ubyivovk and Alexey Buravlev and Harri Lipsanen",
year = "2019",
month = "1",
day = "28",
doi = "10.3390/ma12030406",
language = "English",
volume = "12",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "3",

}

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TY - JOUR

T1 - Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

AU - Seppänen, Heli

AU - Kim, Iurii

AU - Etula, Jarkko

AU - Ubyivovk, Evgeniy

AU - Buravlev, Alexey

AU - Lipsanen, Harri

PY - 2019/1/28

Y1 - 2019/1/28

N2 - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

AB - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

KW - AIN

KW - ALA

KW - ALD

KW - buffer layers

KW - transition layer

KW - MOCVD

KW - regrowth

U2 - 10.3390/ma12030406

DO - 10.3390/ma12030406

M3 - Article

VL - 12

JO - Materials

JF - Materials

SN - 1996-1944

IS - 3

M1 - 406

ER -

ID: 31553949