Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Article number406
Number of pages8
JournalMaterials
Volume12
Issue number3
Publication statusPublished - 28 Jan 2019
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • St. Petersburg Academic State University
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Abstract

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

    Research areas

  • AIN, ALA, ALD, buffer layers, transition layer, MOCVD, regrowth

Download statistics

No data available

ID: 31553949