Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexey Buravlev, Harri Lipsanen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
167 Downloads (Pure)

Abstract

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.
Original languageEnglish
Article number406
Number of pages8
JournalMaterials
Volume12
Issue number3
DOIs
Publication statusPublished - 28 Jan 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • AIN
  • ALA
  • ALD
  • buffer layers
  • transition layer
  • MOCVD
  • regrowth

Fingerprint Dive into the research topics of 'Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition'. Together they form a unique fingerprint.

  • Projects

    2D Layered Materials for Photonics

    Holmi, J., Mustonen, P., Lipsanen, H., Mackenzie, D., Junaid, M., Khayrudinov, V., Mäntynen, H., Seppänen, H., Isakov, K. & Qureshi, M.

    01/09/201631/08/2020

    Project: Academy of Finland: Other research funding

    Equipment

    OtaNano

    Anna Rissanen (Manager)

    Aalto University

    Facility/equipment: Facility

  • Cite this