Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen; Iurii Kim; Jarkko Etula; Evgeniy Ubyivovk; Alexey Buravlev; Harri Lipsanen

doi:10.3390/ma12030406

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexey Buravlev, Harri Lipsanen

Research output: Contribution to journal › Article › Scientific › peer-review

10 Citations (Scopus)

185 Downloads (Pure)

Abstract

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

Original language	English
Article number	406
Number of pages	8
Journal	Materials
Volume	12
Issue number	3
DOIs	https://doi.org/10.3390/ma12030406
Publication status	Published - 1 Feb 2019
MoE publication type	A1 Journal article-refereed

Keywords

AIN
ALA
ALD
buffer layers
transition layer
MOCVD
regrowth

Access to Document

10.3390/ma12030406Licence: CC BY

ELEC_Seppanen_Aluminium Nitride Transition_MaterialsFinal published version, 2.18 MBLicence: CC BY

SFX availability

Full text

1 Finished

2D Layered Materials for Photonics
Holmi, J., Mustonen, P., Lipsanen, H., Mackenzie, D., Junaid, M., Khayrudinov, V., Mäntynen, H., Isakov, K., Susoma, J. & Seppänen, H.
01/09/2016 → 31/08/2020
Project: Academy of Finland: Other research funding

OtaNano - Nanofab
Päivikki Repo (Manager)
OtaNano
Facility/equipment: Facility
OtaNano - Nanomicroscopy Center
Jani Seitsonen (Manager)
OtaNano
Facility/equipment: Facility
OtaNano
Anna Rissanen (Manager)
Aalto University
Facility/equipment: Facility

Cite this

@article{93cd7b23245e4d74809f1507b083ca28,

title = "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition",

abstract = "Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.",

keywords = "AIN, ALA, ALD, buffer layers, transition layer, MOCVD, regrowth",

author = "Heli Sepp{\"a}nen and Iurii Kim and Jarkko Etula and Evgeniy Ubyivovk and Alexey Buravlev and Harri Lipsanen",

year = "2019",

month = feb,

day = "1",

doi = "10.3390/ma12030406",

language = "English",

volume = "12",

journal = "Materials",

issn = "1996-1944",

publisher = "MDPI AG",

number = "3",

}

TY - JOUR

T1 - Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

AU - Seppänen, Heli

AU - Kim, Iurii

AU - Etula, Jarkko

AU - Ubyivovk, Evgeniy

AU - Buravlev, Alexey

AU - Lipsanen, Harri

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

AB - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

KW - AIN

KW - ALA

KW - ALD

KW - buffer layers

KW - transition layer

KW - MOCVD

KW - regrowth

U2 - 10.3390/ma12030406

DO - 10.3390/ma12030406

M3 - Article

VL - 12

JO - Materials

JF - Materials

SN - 1996-1944

IS - 3

M1 - 406

ER -

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Abstract

Keywords

Access to Document

SFX availability

Fingerprint

Projects

2D Layered Materials for Photonics

Equipment

OtaNano - Nanofab

OtaNano - Nanomicroscopy Center

OtaNano

Cite this