Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen; Iurii Kim; Jarkko Etula; Evgeniy Ubyivovk; Alexey Buravlev; Harri Lipsanen

doi:10.3390/ma12030406

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexey Buravlev, Harri Lipsanen

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

Original language	English
Article number	406
Number of pages	8
Journal	Materials
Volume	12
Issue number	3
DOIs	https://doi.org/10.3390/ma12030406
Publication status	Published - 28 Jan 2019
MoE publication type	A1 Journal article-refereed

Keywords

AIN
ALA
ALD
buffer layers
transition layer
MOCVD
regrowth

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10.3390/ma12030406Licence: CC BY

ELEC_Seppanen_Aluminium Nitride Transition_MaterialsFinal published version, 2.18 MBLicence: CC BY

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Projects

1 Active

2D Layered Materials for Photonics

Holmi, J., Mustonen, P., Lipsanen, H., Mackenzie, D., Junaid, M., Khayrudinov, V., Mäntynen, H., Seppänen, H., Isakov, K. & Qureshi, M.

01/09/2016 → 31/08/2020

Project: Academy of Finland: Other research funding

Equipment

OtaNano

Anna Rissanen (Manager)

Aalto University

Facility/equipment: Facility

OtaNano - Nanofab

Päivikki Repo (Manager)

School of Electrical Engineering

Facility/equipment: Facility

OtaNano - Nanomicroscopy Center

Janne Ruokolainen (Manager)

Department of Applied Physics

Facility/equipment: Facility

Cite this

Seppänen, H., Kim, I., Etula, J., Ubyivovk, E., Buravlev, A., & Lipsanen, H. (2019). Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition. Materials, 12(3), [406]. https://doi.org/10.3390/ma12030406

@article{93cd7b23245e4d74809f1507b083ca28,

title = "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition",

abstract = "Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.",

keywords = "AIN, ALA, ALD, buffer layers, transition layer, MOCVD, regrowth",

author = "Heli Sepp{\"a}nen and Iurii Kim and Jarkko Etula and Evgeniy Ubyivovk and Alexey Buravlev and Harri Lipsanen",

year = "2019",

month = "1",

day = "28",

doi = "10.3390/ma12030406",

language = "English",

volume = "12",

journal = "Materials",

issn = "1996-1944",

publisher = "MDPI AG",

number = "3",

}

TY - JOUR

T1 - Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

AU - Seppänen, Heli

AU - Kim, Iurii

AU - Etula, Jarkko

AU - Ubyivovk, Evgeniy

AU - Buravlev, Alexey

AU - Lipsanen, Harri

PY - 2019/1/28

Y1 - 2019/1/28

N2 - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

AB - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

KW - AIN

KW - ALA

KW - ALD

KW - buffer layers

KW - transition layer

KW - MOCVD

KW - regrowth

U2 - 10.3390/ma12030406

DO - 10.3390/ma12030406

M3 - Article

VL - 12

JO - Materials

JF - Materials

SN - 1996-1944

IS - 3

M1 - 406

ER -